Structure of Amorphous<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">e</mml:mi><mml:mo>,</mml:mo><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mo>)</mml:mo></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>Y</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Alloys

I propose kinetically determined topological models of lightly doped ($x\ensuremath{\lesssim}0.05$) amorphous ${(\mathrm{G}\mathrm{e},\mathrm{S}\mathrm{i})}_{1\ensuremath{-}x}{Y}_{x}$ alloys ($Y=\mathrm{H},\mathrm{F},\mathrm{B},\mathrm{P},\dots{}$). Without adjustable parameters the model relates the lowest concentration ${{x}_{\mathrm{H}}}^{0}$ of hydrogen atoms required to quench paramagnetic dangling bonds to the concentration ${c}_{0}$ of unpaired spins at $x=0$. Also discussed are the structural differences between freshly evaporated $\ensuremath{\alpha}$-(Ge, Si) and various stages of ion-bombarded ("amorphized") crystalline material.