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RF plasma treatment of shallow ion-implanted layers of germanium

20155 citationsJournal Article

Authors

P. N. Okholin · V.E. Lashkaryov Institute of Semiconductor Physics

V.I. Glotov · Institute of Electrodynamics

A. N. Nazarov · V.E. Lashkaryov Institute of Semiconductor Physics

V.O. Yuchymchuk · V.E. Lashkaryov Institute of Semiconductor Physics

V.P. Kladko · V.E. Lashkaryov Institute of Semiconductor Physics

Serhii Kryvyi · V.E. Lashkaryov Institute of Semiconductor Physics

Topics & Keywords

Silicon Nanostructures and Photoluminescence Silicon and Solar Cell Technologies Semiconductor materials and devices

UN Sustainable Development Goals

Clean water and sanitation

Publication Details

Published in: Materials Science in Semiconductor Processing

Volume 42, pp. 204-209

DOI: 10.1016/j.mssp.2015.08.028

Field-Weighted Citation Impact: 0.28

RF plasma treatment of shallow ion-implanted layers of germanium | Researchclopedia

· V.E. Lashkaryov Institute of Semiconductor Physics

Stanislav Tiagulskyi · V.E. Lashkaryov Institute of Semiconductor Physics

В. С. Лысенко · V.E. Lashkaryov Institute of Semiconductor Physics

Mohammad Reza Shayesteh · Tyndall National Institute

Ray Duffy · University College Cork