Shallow Si/Pd-based ohmic contacts to n type Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P

Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of /spl sim/6/spl times/10/sup -6/ /spl Omega/-cm/sup 2/ and /spl sim/1/spl times/10/sup -5/ /spl Omega/-cm/sup 2/ have been obtained on Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P respectively (both doped to /spl sim/2/spl times/10/sup 18/ cm/sup -3/). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al/sub 0.5/In/sub 0.5/P and n-Ga/sub 0.5/In/sub 0.5/P are presented.