Electrical Properties of Al2 O 3 ‐ Ta2 O 5 Composite Dielectric Thin Films Prepared by RF Reactive Sputtering

Composite thin films of and were deposited by RF magnetron cosputtering in argon‐oxygen mixed gas. As the molar concentration of the films decreased, the dielectric constant decreased from 25 to 7, and the leakage current also decreased. Controlling the composition of the thin films ( concentration: 40–80%), dielectric properties were found to be more suitable for the thin film devices, i.e., higher dielectric constant , higher breakdown voltage, and lower leakage currents (, at 20V).