InAs-based interband cascade lasers near 6 µm

200830 citationsJournal Article

Authors

Zhiwei Tian · University of Oklahoma

Rui Q. Yang · University of Oklahoma

T. D. Mishima · University of Oklahoma

M. B. Santos · University of Oklahoma

R. T. Hinkey · University of Oklahoma

Mark E. Curtis · University of Oklahoma

Matthew B. Johnson ·

Abstract

Broad-area interband cascade lasers have been demonstrated on an InAs substrate and at emission wavelengths near 6 µm at temperatures up to 150 K in continuous-wave mode. The emission wavelengths are the longest achieved among III-V interband diode lasers. The threshold current density and voltage are about 50 A/cm2 and 2.4 V, respectively, at 82 K.

Topics & Keywords

Spectroscopy and Laser Applications Semiconductor Lasers and Optical Devices Laser Design and Applications

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Electronics Letters

Volume 45, Issue 1, pp. 48-49

DOI: 10.1049/el:20092779

Field-Weighted Citation Impact: 0.81