Preparation of Pb(Zn0.52Ti0.48)O3 Films by Laser Ablation

199091 citationsJournal Article

Authors

Shigeru Otsubo · Kanazawa University

Toshihiro Maeda · Kanazawa University

Toshiharu Minamikawa · Industrial Research Institute of Ishikawa

Yasuto Yonezawa · Industrial Research Institute of Ishikawa

Akiharu Morimoto · Industrial Research Institute of Ishikawa

Tatsuo Shimizu · Industrial Research Institute of Ishikawa

Abstract

Pb(Zr 0.52 Ti 0.48 )O 3 films were prepared on an r -plane sapphire substrate by laser ablation using the ArF excimer laser. This is the first report on the preparation of Pb(Zr 0.52 Ti 0.48 )O 3 films by laser ablation. The composition of the deposited films was found to be fairly close to the composition of the target material for a wide range of the substrate temperature, 400–750°C. The substrate temperature greatly influences the crystal structure; a low substrate temperature produces a pyrochlore phase and a high substrate temperature (750°C) a perovskite phase.

Topics & Keywords

Ferroelectric and Piezoelectric Materials Microwave Dielectric Ceramics Synthesis Electronic and Structural Properties of Oxides

Publication Details

Published in: Japanese Journal of Applied Physics

Volume 29, Issue 1A, pp. L133-L133

DOI: 10.1143/jjap.29.l133

Field-Weighted Citation Impact: 12.90

Command Palette

Preparation of Pb(Zn<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> Films by Laser Ablation

Authors

Abstract

Topics & Keywords

Publication Details