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Abstract The article contains sections titled: 1. Total‐Reflection X‐ray Fluorescence Analysis (TXRF) 1.1. Principles 1.2. Instrumentation 1.3. Spectral Information 1.4. Quantification 1.5. Applications 1.5.1. Particulate and Film‐Type Surface Contamination 1.5.2. Semiconductors 1.5.2.1. Depth Profiling by TXRF and Multilayer Structures 1.5.2.2. Vapor Phase Decomposition (VPD) and Droplet Collection 2. Glow Discharge Optical Emission Spectroscopy (GD‐OES) 2.1. Principles 2.2. Instrumentation 2.3. Spectral Information 2.4. Quantification 2.5. Depth Profiling 2.6. Applications 3. Surface‐Sensitive IR and Raman Spectroscopy; Ellipsometry 3.1. Reflection ‐ Absorption IR Spectroscopy (RAIRS) 3.1.1. Principles 3.1.2. Instrumentation and Applications 3.2. Surface Raman Spectroscopy 3.2.1. Principles 3.2.2. Surface‐Enhanced Raman Scattering (SERS) 3.2.2.1. Instrumentation 3.2.2.2. Spectral Information 3.2.2.3. Applications 3.2.3. Nonlinear Optical Spectroscopy 3.3. UV ‐ VIS ‐ IR Ellipsometry (ELL) 3.3.1. Principles 3.3.2. Instrumentation 3.3.3. Applications 4. Other Photon‐Detecting Techniques 4.1. Appearance‐Potential Methods 4.1.1. Soft X‐Ray Appearance‐Potential Spectroscopy (SXAPS) 4.1.2. Disappearance‐Potential Spectroscopy (DAPS) 4.2. Inverse Photoemission Spectroscopy (IPES) and Bremsstrahlung Isochromat Spectroscopy (BIS) 4.3. Ion‐Beam Spectrochemical Analysis (IBSCA)