Ge1−<i>x</i>−<i>y</i>Si<i>x</i>Sn<i>y</i> light emitting diodes on silicon for mid-infrared photonic applications

This paper reports initial the demonstration of prototype Ge1−x−ySixSny light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [n-Ge/i-Ge1−x−ySixSny/p-Ge(Sn/Si)] using ultra low-temperature (T &amp;lt; 300 °C) depositions of the highly reactive chemical sources Si4H10, Ge4H10, Ge3H8, and SnD4. The Sn content in the i-Ge1−x−ySixSny layer was varied from ∼3.5% to 11%, while the Si content was kept constant near 3%. The Si/Sn amounts in the p-layer were selected to mitigate the lattice mismatch so that the top interface grows defect-free, thereby reducing the deleterious effects of mismatch-induced dislocations on the optical/electrical properties. The spectral responsivity plots of the devices reveal sharp and well-defined absorption edges that systematically red-shift in the mid-IR from 1750 to 2100 nm with increasing Sn content from 3.5% to 11%. The electroluminescence spectra reveal strong direct-gap emission peaks and weak lower energy shoulders attributed to indirect gaps. Both peaks in a given spectrum red-shift with increasing Sn content and their separation decreases as the material approaches direct gap conditions in analogy with binary Ge1−ySny counterparts. These findings-combined with the enhanced thermal stability of Ge1−x−ySixSny relative to Ge1−ySny and the observation that ternary alloy disorder does not adversely affect the emission properties—indicate that Ge1−x−ySixSny may represent a practical target system for future generations of group-IV light sources on Si.