High-performance n-MoS<sub>2</sub>/i-SiO<sub>2</sub>/p-Si heterojunction solar cells

2015119 citationsJournal Article

Authors

Lanzhong Hao · China University of Petroleum, Beijing

Wei Gao · Qingdao Eighth People's Hospital

Y. J. Liu · Qingdao Eighth People's Hospital

Zhongying Han · China University of Petroleum, East China

Qingzhong Xue · China University of Petroleum, Beijing

Wenyue Guo · China University of Petroleum, East China

Jing Zhu

Abstract

A solar cell based on the n-MoS2/i-SiO2/p-Si heterojunction is fabricated. The device exhibits a high power-conversion efficiency of 4.5% due to the incorporation of a nano-scale SiO2 buffer into the MoS2/Si interface. The present device architectures are envisaged as potentially valuable candidates for high-performance photovoltaic devices.

Topics & Keywords

2D Materials and Applications Semiconductor materials and interfaces Nanowire Synthesis and Applications

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Nanoscale

Volume 7, Issue 18, pp. 8304-8308

DOI: 10.1039/c5nr01275a

Field-Weighted Citation Impact: 5.02