Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

201577 citationsJournal Article

Authors

Umesh Chand · National Yang Ming Chiao Tung University

Kuan-Chang Huang · United Microelectronics (Taiwan)

Chun-Yang Huang · United Microelectronics (Taiwan)

Tseung‐Yuen Tseng · National Yang Ming Chiao Tung University

Abstract

In this paper, the nonlinear switching mechanism of the Ti/HfO 2 /Al 2 O 3 /TiN crossbar structure resistive random access memory device with good reliability is investigated. The nonlinearity of the device can be revealed by inserting a large bandgap of an Al 2 O 3 thin layer between the TiN bottom electrode and the HfO 2 switching film. The nonlinear switching mechanism caused by Flower-Nordheim tunneling involves the tunneling barrier of the Al 2 O 3 layer. Besides, the nonlinear behavior is also sensitive to the thickness of the inserting Al 2 O 3 layer. A high nonlinear factor of 37, large endurance more than 10 4 , and good retention properties are achieved in the Ti/HfO 2 /Al 2 O 3 (1-nm)/TiN structure.

Topics & Keywords

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices

Publication Details

Published in: IEEE Transactions on Electron Devices

Volume 62, Issue 11, pp. 3665-3670

DOI: 10.1109/ted.2015.2471835

Field-Weighted Citation Impact: 4.42

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Mechanism of Nonlinear Switching in HfO<sub>2</sub>-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

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