Test and characterisation of modern fast recovery diodes for high speed switching applications

In modern power electronics applications, diodes and other circuit components have been required to switch at much higher speeds and frequencies. Ultra fast recovery diodes complementing modern high power switching devices such as IGBTs and MOSFETs are available with extremely small switching parameters. Characterisation of such devices requires a good understanding of the device requirements, improved electrical test circuits and special test procedures. In this paper, the main requirements for the test and characterisation of modern ultra fast power diodes are discussed. A brief description of different test circuits traditionally used to carry out the dynamic tests are presented outlining the advantages and disadvantages of each method. In addition, the authors suggests improved methods for testing modern ultra fast diodes especially for high speed switching applications. Results for the diode reverse recovery waveforms obtained using different test circuits are also presented.