Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a ²⁴¹Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain the mobility for each charge carrier. The Hecht equation has been employed to evaluate the lifetime. The measured values for <i>μτ</i>_<i>e/h</i> (mobility-lifetime product) are in agreement with earlier published data.