Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine

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Abstract

The growth of high-purity gallium arsenide using tertiarybutylarsine (TBA) and trimethylgallium is reported. The availability of high-purity TBA has permitted the growth of material with liquid-nitrogen mobilities of up to 80 000 cm2/V s, the highest value yet reported for growth with any alkyl arsine. The residual donor species have been identified by magnetophotoluminescence.

Topics & Keywords

Semiconductor Quantum Structures and Devices GaN-based semiconductor devices and materials Quantum Dots Synthesis And Properties

Publication Details

Published in: Applied Physics Letters

Volume 54, Issue 20, pp. 2029-2031

DOI: 10.1063/1.101182

Field-Weighted Citation Impact: 7.56

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Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine

Authors

Abstract

Topics & Keywords

Publication Details