Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

2014223 citationsJournal Article

Authors

Seyed Amir Ghetmiri · University of Arkansas at Fayetteville

Wei Du · University of Arkansas at Fayetteville

Joe Margetis · ASM International

Aboozar Mosleh · University of Arkansas at Fayetteville

Larry Cousar · University of Arkansas at Fayetteville

Benjamin R. Conley · University of Arkansas at Fayetteville

Lucas Domulevicz

Abstract

Material and optical characterizations have been conducted for epitaxially grown Ge1−xSnx thin films on Si with Sn composition up to 10%. A direct bandgap Ge0.9Sn0.1 alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as long as 2230 nm has also been observed from the same sample.

Topics & Keywords

Photonic and Optical Devices Semiconductor Lasers and Optical Devices Photonic Crystals and Applications

Publication Details

Published in: Applied Physics Letters

Volume 105, Issue 15

DOI: 10.1063/1.4898597

Field-Weighted Citation Impact: 14.10

Command Palette

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Authors

Abstract

Topics & Keywords

Publication Details