Single crystal ß‐Si<sub>3</sub>N<sub>4</sub> fibers obtained by self‐propagating high temperature synthesis**

199570 citationsJournal Article

Authors

Miguel Á. Rodríguez · Escuela Nacional de Medicina del Trabajo

Nikolay S. Makhonin · Escuela Nacional de Medicina del Trabajo

Juan A. Escriña · Escuela Nacional de Medicina del Trabajo

Inna P. Borovinskava · Escuela Nacional de Medicina del Trabajo

M.I. Osendi · Instituto de Cerámica y Vidrio

María F. Barba · Instituto de Cerámica y Vidrio

Juan Eugenio Iglesias

Abstract

The growth of single crystal β‐silicon nitride fibers (see Figure) several millimeters long through the application of self‐propagating high‐temperature synthesis is demonstrated. Advantages include the igh purity of the fibers obtained, the fact that the fibers are stable up to 2000°C, and the low cost of the SHS process magnified image .

Topics & Keywords

Advanced ceramic materials synthesis Advanced Surface Polishing Techniques Semiconductor materials and devices

Publication Details

Published in: Advanced Materials

Volume 7, Issue 8, pp. 745-747

DOI: 10.1002/adma.19950070815

Field-Weighted Citation Impact: 2.19

Command Palette

Single crystal ß‐Si<sub>3</sub>N<sub>4</sub> fibers obtained by self‐propagating high temperature synthesis**

Authors

Abstract

Topics & Keywords

Publication Details