Development of a 557 GHz GaAs monolithic membrane-diode mixer

201224 citationsJournal Article

Authors

Huan Zhao · Chalmers University of Technology

Vladimir Drakinskiy · Chalmers University of Technology

Peter Sobis · Omnisys Instruments (Sweden)

Johanna Hanning · Chalmers University of Technology

Tomas Bryllert · Chalmers University of Technology

Aik-Yean Tang · Chalmers University of Technology

Jan Stake

Abstract

We present the development of a monolithically integrated 557 GHz membrane Schottky diode mixer. RF test shows state-of-the-art performance with an optimum receiver noise temperature below 1300 K DSB and an estimated mixer DSB conversion loss of 9 dB and a mixer DSB noise temperature of 1100 K including all losses.

Topics & Keywords

Superconducting and THz Device Technology Radio Frequency Integrated Circuit Design Microwave Engineering and Waveguides

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

DOI: 10.1109/iciprm.2012.6403330

Field-Weighted Citation Impact: 2.73