Schottky type photodiodes as detectors in the VUV and soft x-ray range

1988105 citationsJournal Article

Authors

Michael Krumrey · Federal Foreign Office

E. Tegeler · Blockheizkraftwerks- Träger- und Betreibergesellschaft (Germany)

J. Barth · Max Planck Institute for Solid State Research

M. Krisch · Universität Hamburg

F. Schäfers · Federal Foreign Office

Reinhard Wolf · Universität Hamburg

Abstract

The quantum efficiencies of semiconductor photodiodes have been measured at photon energies from 5 to 3500 eV. For silicon photodiodes strong radiation-induced effects were found. GaAsP and GaP Schottky diodes show remarkable stability and high quantum efficiency. Use of Schottky diodes for spectroscopic and radiometric measurements is discussed.

Topics & Keywords

Advanced Semiconductor Detectors and Materials Calibration and Measurement Techniques Radiation Detection and Scintillator Technologies

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Applied Optics

Volume 27, Issue 20, pp. 4336-4336

DOI: 10.1364/ao.27.004336

Field-Weighted Citation Impact: 10.42