Heterojunction band discontinuities

1976272 citationsJournal Article

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Abstract

The discontinuity ΔEc=0.56 eV in the conduction band edge at n-CdS/p-InP junctions is reported. This discontinuity and others are compared with photoemission data and with Van Vechten’s extension of these data to many tetrahedrally coordinated semiconductors. Agreement between measured discontinuities and theoretical predictions is very good. Predictions are made for band parameters pertinent to interfaces involving AIIBIVCV2 compounds with zinc blende, chalcopyrite, or wurtzite crystal structures.

Topics & Keywords

Chalcogenide Semiconductor Thin Films Semiconductor materials and interfaces Advanced Semiconductor Detectors and Materials

Publication Details

Published in: Applied Physics Letters

Volume 28, Issue 1, pp. 31-33

DOI: 10.1063/1.88555

Field-Weighted Citation Impact: 10.11

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Heterojunction band discontinuities

Authors

Abstract

Topics & Keywords

Publication Details