High Carrier Mobility of Organic Field‐Effect Transistors with a Thiophene–Naphthalene Mesomorphic Semiconductor

A novel calamitic mesophase semiconductor based on symmetrically designed thiophene–naphthalene, 2,6-di(5′-n-octyl-2′-thienyl)naphthalene, is used as the active layer in a field-effect transistor and the device performance is studied (see figure). This mesogen has an excellently high mobility of 0.14 cm2 V–1s–1 in a polycrystalline film at room temperature.