Transfer of 3 in GaAs film on silicon substrateby proton implantation process

199883 citationsJournal Article

Authors

E. Jalaguier · Commissariat à l'Énergie Atomique et aux Énergies Alternatives

B. Aspar · CEA Grenoble

S. Pocas · Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Jean-François Michaud · Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Marc Zussy · CEA Grenoble

A.M. Papon · Commissariat à l'Énergie Atomique et aux Énergies Alternatives

M. Bruel

Abstract

For the first time, transfer of a thin monocrystalline GaAs film from its original bulk substrate onto a silicon substrate was achieved by proton implantation and wafer bonding. Successful transfers of 3 in GaAs film are presented.

Topics & Keywords

Semiconductor materials and devices 3D IC and TSV technologies Semiconductor materials and interfaces

Publication Details

Published in: Electronics Letters

Volume 34, Issue 4, pp. 408-409

DOI: 10.1049/el:19980265

Field-Weighted Citation Impact: 12.55

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Transfer of 3 in GaAs film on silicon substrateby proton implantation process

Authors

Abstract

Topics & Keywords

Publication Details