Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells

The authors measure the interplay of piezoelectric field and built-in potential on carrier recombination and quantum confined Stark effect in green light emitting InGaN quantum wells by modulating the external bias voltage of the pn junction. Time-resolved electroluminescence shows a temporal separation of carrier injection into the active region and radiative recombination within the InGaN quantum wells. During the time when the bias voltage is off, the piezoelectric field is partially compensated by the built-in potential of the pn junction, resulting in an increased radiative recombination rate.