Photoreflectance-probed excited states in InAs∕InGaAlAs quantum dashes grown on InP substrate

200643 citationsJournal Article

Authors

W. Rudno‐Rudziński · Wrocław University of Science and Technology

R. Kudrawiec · Institute of Physics

P. Podemski · Wrocław University of Science and Technology

G. Sęk · Wrocław University of Science and Technology

J. Misiewicz · Institute of Physics

A. Somers · University of Würzburg

R. Schwertberger

Abstract

Photoreflectance (PR) measurements have been performed on InAs∕In0.53Ga0.23Al0.24As quantum dashes (QDashes) molecular-beam epitaxy grown on InP substrate. The PR features related to all relevant parts of the structure have been detected, including the ground and excited state optical transitions in QDashes. QDash ground state transition shifts from 1.5 to almost 2μm with the increase in the thickness of InAs layer, corresponding to the increase in the average size of the dashes. Excited state transitions have been clearly observed at the energy of about 150meV above the ground state transition energy.

Topics & Keywords

Semiconductor Quantum Structures and Devices Semiconductor Lasers and Optical Devices Photonic and Optical Devices

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Applied Physics Letters

Volume 89, Issue 3

DOI: 10.1063/1.2226503

Field-Weighted Citation Impact: 2.81