Universal Electric‐Field‐Driven Resistive Transition in Narrow‐Gap Mott Insulators

2013140 citationsJournal Articlegreen Open Access

Authors

Pablo Stoliar · Université Paris-Sud

Laurent Cario · Centre National de la Recherche Scientifique

Étienne Janod · Centre National de la Recherche Scientifique

B. Corraze · Centre National de la Recherche Scientifique

Catherine Guillot‐Deudon · Institut des Matériaux Jean Rouxel

Sabrina Salmon-Bourmand · Centre National de la Recherche Scientifique

Vincent Guiot

Abstract

A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.

Topics & Keywords

Advanced Memory and Neural Computing Electronic and Structural Properties of Oxides Nonlinear Dynamics and Pattern Formation

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Advanced Materials

Volume 25, Issue 23, pp. 3222-3226

DOI: 10.1002/adma.201301113

Field-Weighted Citation Impact: 8.41