Extraction of Schottky diode parameters from forward current-voltage characteristics

19862,686 citationsJournal Article

Authors

S. K. Cheung · University of California, Berkeley

N.W. Cheung · University of California, Berkeley

Abstract

It is shown that by using the forward current density-voltage (J-V) characteristics of a Schottky diode, a plot of d(V)/d(ln J) vs J and a plot of the function H(J) vs J, where H(J)≡V−n(kT/q)ln(J/A**T2), will each give a straight line. The ideality factor n, the barrier height φB, and the series resistance R of the Schottky diode can be determined with one single I-V measurement. This procedure has been used successfully to study thermal annealing effects of W/GaAs Schottky contacts.

Topics & Keywords

Semiconductor materials and interfaces Integrated Circuits and Semiconductor Failure Analysis Semiconductor materials and devices

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Applied Physics Letters

Volume 49, Issue 2, pp. 85-87

DOI: 10.1063/1.97359

Field-Weighted Citation Impact: 2.99