Crystallographic Contrast Due to Primary Ion Channelling in the Scanning Ion Microscope

198317 citationsJournal Article

Authors

P.H. La Marche · Fermi National Accelerator Laboratory

Kei Fong Lam · Fermi National Accelerator Laboratory

Abstract

We observe large crystallographic contrast, in scanning ion micrographs of recrystallized Cu and Si, made by collecting secondary ions or electrons. The contrast is attributed to primary ion-channelling effects. Observed relative secondary ion and electron yields are discussed in relation to the rate of energy loss, calculated for various crystallographic directions.

Topics & Keywords

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Electron and X-Ray Spectroscopy Techniques

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: IEEE Transactions on Nuclear Science

Volume 30, Issue 2, pp. 1240-1242

DOI: 10.1109/tns.1983.4332498

Field-Weighted Citation Impact: 1.66