Nanogap formation by palladium hydrogenation for surface conduction electron emitters fabrication

200721 citationsJournal Articlebronze Open Access

Authors

Chih-Hao Tsai · National Yang Ming Chiao Tung University

Fu‐Ming Pan · National Yang Ming Chiao Tung University

Kuan-Jung Chen · National Yang Ming Chiao Tung University

Cheng-Yang Wei · National Yang Ming Chiao Tung University

Mei Liu · Chunghwa Picture Tubes (Taiwan)

Chi-Neng Mo · Chunghwa Picture Tubes (Taiwan)

Abstract

Nanometer-scale gaps in Pd strips are obtained by hydrogen absorption under high pressure treatment. The resulting lattice constant increase due to the Pd phase transformation after hydrogen uptake results in a large compressive stress on the thin Pd films. Under proper geometric arrangement of the Pd electrode within a surface conduction electron (SCE) emitter structure, a single nanogap per SCE device is obtained. A turn-on voltage of 41V is observed for emitters with a 25nm gap.

Topics & Keywords

Semiconductor materials and devices Molecular Junctions and Nanostructures Diamond and Carbon-based Materials Research

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Applied Physics Letters

Volume 90, Issue 16

DOI: 10.1063/1.2728761

Field-Weighted Citation Impact: 3.72