Raman Scattering of Reactive-ion Etched GaAs

198827 citationsJournal Article

Authors

M. Watt · University of St Andrews

C.M. Sotomayor-Torres · University of St Andrews

Rebecca Cheung · University of St Andrews

C.D.W. Wilkinson · University of St Andrews

H.E.G. Arnot · University of St Andrews

S.P. Beaumont · University of St Andrews

Abstract

Abstract We have used Raman scattering to investigate the extent and nature of the damage caused by dry etching of GaAs samples. Damage has been seen to be confined to the first few hundred ångströms and has a correlation length larger than 250 Å. A sample on which ‘quantum dots’ had been etched has also been studied and a new feature observed in the spectrum. This is discussed in terms of a surface phonon mode.

Topics & Keywords

Semiconductor materials and devices Ion-surface interactions and analysis Silicon Nanostructures and Photoluminescence

Publication Details

Published in: Journal of Modern Optics

Volume 35, Issue 3, pp. 365-370

DOI: 10.1080/09500348814550401

Field-Weighted Citation Impact: 6.32

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Raman Scattering of Reactive-ion Etched GaAs

Authors

Abstract

Topics & Keywords

Publication Details