Deposition of silicon dioxide films with an atmospheric-pressure plasma jet

1998241 citationsJournal Article

Authors

S E Babayan · University of California, Los Angeles

James Jeong · University of California, Los Angeles

V J Tu · University of California, Los Angeles

Ji Sun Park · Los Alamos National Laboratory

Gary S. Selwyn · Los Alamos National Laboratory

Robert F. Hicks · University of California, Los Angeles

Abstract

A plasma jet has been developed which deposits silica films at up to at 760 Torr and 115 to C. The jet operates by feeding oxygen and helium gas between two coaxial electrodes that are driven by a 13.56 MHz radio frequency source at 40 to 500 W. Tetraethoxysilane is mixed with the effluent of the plasma jet and directed onto a substrate located 1.7 cm downstream. The properties of the silica films, as determined by infrared spectroscopy and capacitance measurements, are comparable to those of thermally grown silicon dioxide films at C.

Topics & Keywords

Gas Sensing Nanomaterials and Sensors Plasma Diagnostics and Applications Plasma Applications and Diagnostics

UN Sustainable Development Goals

Clean water and sanitation

Publication Details

Published in: Plasma Sources Science and Technology

Volume 7, Issue 3, pp. 286-288

DOI: 10.1088/0963-0252/7/3/006

Field-Weighted Citation Impact: 6.88