Silicon carbide power transistors for photovoltaic applications

Silicon Carbide is the promising technology for the applications in high frequency, high voltage, high power and high temperature, principally due to their low conduction losses and fast switching capability. The aim of this paper is to test and evaluate the dynamic characteristics of SiC transistors and describe the utilization of full performance of SiC for photovoltaic applications. A standard double pulse test with a clamped inductive load has been used for dynamic characterization of the power transistors at different temperatures and load conditions.