High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

2003168 citationsJournal Articlebronze Open Access

Authors

Jérôme Faure‐Vincent · Groupe de Physique des Matériaux

C. Tiuşan · Groupe de Physique des Matériaux

E. Jouguelet · Groupe de Physique des Matériaux

F. Canet · Groupe de Physique des Matériaux

M. Sajieddine · Groupe de Physique des Matériaux

C. Bellouard · Groupe de Physique des Matériaux

E. Popova

Abstract

We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By increasing the thickness of the insulating layer (tMgO), we have strongly enhanced the tunnel magnetoresistance. Values up to ∼100% at 80 K (∼67% at room temperature) have been observed with tMgO=2.5 nm. This tunnel magnetoresistance ratio, which is much larger than the one predicted by the Jullière’s model, can be understood in the framework of ab initio calculations.

Topics & Keywords

Magnetic properties of thin films Physics of Superconductivity and Magnetism Magnetic Properties of Alloys

Publication Details

Published in: Applied Physics Letters

Volume 82, Issue 25, pp. 4507-4509

DOI: 10.1063/1.1586785

Field-Weighted Citation Impact: 13.84

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High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

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Abstract

Topics & Keywords

Publication Details