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Quantifying ion-induced defects and Raman relaxation length in graphene

20101,729 citationsJournal Article

Authors

Márcia Maria Lucchese · Instituto Nacional de Metrologia, Qualidade e Tecnologia

Fernando Stavale · Instituto Nacional de Metrologia, Qualidade e Tecnologia

Erlon H. Martins Ferreira · Instituto Nacional de Metrologia, Qualidade e Tecnologia

Cecília Vilani · Instituto Nacional de Metrologia, Qualidade e Tecnologia

Marcus V. O. Moutinho · Universidade Federal do Rio de Janeiro

Rodrigo B. Capaz · Universidade Federal do Rio de Janeiro

Topics & Keywords

Graphene research and applications Diamond and Carbon-based Materials Research Ion-surface interactions and analysis

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Carbon

Volume 48, Issue 5, pp. 1592-1597

DOI: 10.1016/j.carbon.2009.12.057

Field-Weighted Citation Impact: 36.44

Quantifying ion-induced defects and Raman relaxation length in graphene | Researchclopedia

Carlos A. Achete

· Instituto Nacional de Metrologia, Qualidade e Tecnologia

Ado Jório · Instituto Nacional de Metrologia, Qualidade e Tecnologia