Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P

Arsine and phosphine were decomposed in a high temperature leak‐source to provide and molecular beams for molecular beam epitaxy of and . Reasonable growth rates (0.5–1.5 μm/hr) were achieved for both semiconductors. The studies demonstrated that with this method, MBE of can be done with the substrate temperature as high as 700°C. The maximum growth temperature obtained for was approximately 600°C. A reasonable increase in leak rate at the source should permit at 750°C and at 650°C.