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Scaling properties of the tunneling field effect transistor (TFET): Device and circuit
2005
102 citations
Journal Article
Field-Weighted Citation Impact:
3.26
Scaling properties of the tunneling field effect transistor (TFET): Device and circuit | Researchclopedia
Infineon Technologies (Germany)
C. Weber
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Infineon Technologies (Germany)
Robert Heinrich
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Infineon Technologies (Germany)
U. Schaper
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Infineon Technologies (Germany)
J. Einfeld
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Infineon Technologies (Germany)
R. Neubert
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Infineon Technologies (Germany)
Uwe Feldmann
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Infineon Technologies (Germany)
Knut Stahrenberg
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Infineon Technologies (Germany)
E. Ruderer
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Infineon Technologies (Germany)
Georg Georgakos
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Infineon Technologies (Germany)
A. Huber
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Infineon Technologies (Germany)
R. Kakoschke
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Infineon Technologies (Germany)
W. Hänsch
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Technical University of Munich
D. Schmitt‐Landsiedel
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Technical University of Munich