Scanning microwave microscopy/spectroscopy on metal-oxide-semiconductor systems

In this paper, an analytical model for capacitance measurements by scanning microwave microscopy (SMM)/scanning microwave spectroscopy is presented. The tip-sample interactions are included by using the physics of metal-oxide-semiconductor junctions and the influence of various experimental parameters, such as the operation frequency, tip bias, tip area, oxide thickness, and sample doping are discussed. For calibrated carrier profiling it is shown that all relevant operation parameters of the SMM can be condensed into a single calibration constant and that the sample doping is obtained by using a simple analytical formula.