Room-Temperature Spin Injection from Fe into GaAs

2001702 citationsJournal Article

Authors

H. J. Zhu · Paul Drude Institute for Solid State Electronics

M. Ramsteiner · Paul Drude Institute for Solid State Electronics

H. Kostial · Paul Drude Institute for Solid State Electronics

M. Wassermeier · Paul Drude Institute for Solid State Electronics

H.‐P. Schönherr · Paul Drude Institute for Solid State Electronics

K. H. Ploog · Paul Drude Institute for Solid State Electronics

Abstract

Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.

Topics & Keywords

Quantum and electron transport phenomena Magnetic properties of thin films Semiconductor materials and devices

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Physical Review Letters

Volume 87, Issue 1, pp. 016601-016601

DOI: 10.1103/physrevlett.87.016601

Field-Weighted Citation Impact: 54.67