InP-based multiwavelength QWIP technology

This paper describes the design, growth and fabrication characterization of novel multi-wavelength QWIP wafers based on InP material systems. We designed, grew, fabricated and characterized AlGaInAs/GaInAs QWIPs suitable for operation at 3-5 μm, and 8-12 μm spectral range. We fabricated mid-wave IR 320 x 250 focal plane arrays, hybridized them with Si -readout circuits and performed radiometric and imaging tests. Excellent imaging results of the mid-wave IR focal plane arrays with an operability of 88% and mean NEDT of 0.09K have been achieved. To our knowledge, this is the first imaging with InP based QWIPs focal plane array.