Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency

2007140 citationsJournal Article

Authors

Jian Zhong · Rutgers, The State University of New Jersey

H. Chen · Rutgers, The State University of New Jersey

Gaurav Saraf · Rutgers, The State University of New Jersey

Yicheng Lu · Rutgers, The State University of New Jersey

Changhyun Choi

J. J. Song · University of California, San Diego

David M. Mackie · DEVCOM Army Research Laboratory

Abstract

Enhancement of light extraction from an integrated ZnO nanotips/GaN light emitting diode (LED) is demonstrated. The device is composed of a GaN LED with a Ga-doped ZnO (GZO) transparent conductive layer and ZnO nanotips grown on GZO for light extraction. The light output power of a ZnO nanotips/GZO/GaN LED exhibits 1.7 times enhancement, in comparison with a conventional Ni∕Au p-metal LED. The higher emission efficiency is attributed to the enhanced light transmission and scattering in the ZnO∕GaN multilayer.

Topics & Keywords

ZnO doping and properties GaN-based semiconductor devices and materials Ga2O3 and related materials

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Applied Physics Letters

Volume 90, Issue 20

DOI: 10.1063/1.2741052

Field-Weighted Citation Impact: 8.29