New method to measure the source and drain resistance of the GaAs MESFET

198676 citationsJournal Article

Authors

Lin‐An Yang · University of California, Berkeley

S.I. Long · University of California, Santa Barbara

Abstract

The method to measure the source resistance of the GaAs MESFET proposed here is able to determine its value directly without correcting for the channel resistance of the GaAs MESFET. A low gate current measurement condition is employed which leads to accurate determination of R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf> and R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf> over a relatively wide range of drain currents.

Topics & Keywords

Advancements in Semiconductor Devices and Circuit Design Analog and Mixed-Signal Circuit Design Semiconductor materials and interfaces

Publication Details

Published in: IEEE Electron Device Letters

Volume 7, Issue 2, pp. 75-77

DOI: 10.1109/edl.1986.26299

Field-Weighted Citation Impact: 7.05

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New method to measure the source and drain resistance of the GaAs MESFET

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Abstract

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Publication Details