Au/In/Pd/Te/Pd ohmic contact to <i>n</i> -GaSb

199611 citationsJournal Article

Authors

Abstract

An Au/In/Pd/Te/Pd ohmic contact scheme has been developed to n-GaSb (n ≃ 1018 cm–3). Annealed at 250 and 400°C, this contact scheme exhibits excellent electrical properties (contact resistivity <10–6 Ω-cm2) and good thermal stability. The surface and interface morphologies were investigated using scanning electron microscope (SEM). The ohmic contact formation mechanism is also proposed.

Topics & Keywords

Semiconductor materials and interfaces Semiconductor materials and devices Semiconductor Quantum Structures and Devices

Publication Details

Published in: Electronics Letters

Volume 32, Issue 25, pp. 2348-2349

DOI: 10.1049/el:19961589

Field-Weighted Citation Impact: 0.26

Command Palette

Au/In/Pd/Te/Pd ohmic contact to <i>n</i> -GaSb

Authors

Abstract

Topics & Keywords

Publication Details