Reactive ion etching of II-VI semiconductors using a mixture of methane and hydrogen

199123 citationsJournal Article

Authors

C.M. Sotomayor Torres · University of Glasgow

C. D. W. Wilkinson · University of Glasgow

Abstract

It was found that RIE using CH4/H2 is a high resolution dry etching technique which is suitable for a variety of II-VI semiconductors. The optimum conditions for etching of ZnTe are given. The quality of surfaces etched under these conditions has been examined using XPS and Raman spectroscopy, both techniques indicating little overt damage.

Topics & Keywords

Integrated Circuits and Semiconductor Failure Analysis Semiconductor materials and devices Advancements in Photolithography Techniques

Publication Details

Published in: Electronics Letters

Volume 27, Issue 1, pp. 73-75

DOI: 10.1049/el:19910047

Field-Weighted Citation Impact: 5.01

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Reactive ion etching of II-VI semiconductors using a mixture of methane and hydrogen

Authors

Abstract

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Publication Details