Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers

The influence of several design parameters on the temperature stability of the emission wavelength of 980 nm GaInAs/(Al)GaAs quantum-dot lasers was studied. The results obtained agree well with a simplified model based on the inhomogeneously broadened transitions of a quantum-dot ensemble. Using this model, the optimum cavity design for a given gain function can be determined. Following this approach, quantum-dot lasers with low wavelength shifts of 0.16 nm/K were realized, which is only half the value of a typical GaInAs/(Al)GaAs quantum well laser.