Numerical analysis of Oxygen control during growth of Czochralski silicon single crystals

In the present work, a set of 2D global furnace simulations accounting for oxygen dissolution and transport have been used to predict Oi content along the produced Silicon crystal. It is shown that Oi content is sensitive to several growth parameters (melt level, crucible rotation, etc.). Results indicate Oxygen tends to increase at the end of the crystal due to a combination of weakening of turbulence and planar velocity in addition to decrease of the melt free surface. Crucible rotation is the most influencing parameter at low melt level. Argon gas pressure and flow have a limited impact at low melt level.