20 THz broadband generation using semi-insulating GaAs interdigitated photoconductive antennas

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Authors

P. J. Hale · Okinawa Institute of Science and Technology Graduate University

Julien Madéo · Okinawa Institute of Science and Technology Graduate University

C. Chin · Okinawa Institute of Science and Technology Graduate University

Sukhdeep Dhillon · Université Paris Cité

J. Mangeney · Université Paris Cité

J. Tignon · Délégation Paris 7

Keshav M. Dani

Abstract

We demonstrate broadband (20 THz), high electric field, terahertz generation using large area interdigitated antennas fabricated on semi-insulating GaAs. The bandwidth is characterized as a function of incident pulse duration (15-35 fs) and pump energy (2-30 nJ). Broadband spectroscopy of PTFE is shown. Numerical Drude-Lorentz simulations of the generated THz pulses are performed as a function of the excitation pulse duration, showing good agreement with the experimental data.

Topics & Keywords

Terahertz technology and applications Gyrotron and Vacuum Electronics Research Superconducting and THz Device Technology

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Optics Express

Volume 22, Issue 21, pp. 26358-26358

DOI: 10.1364/oe.22.026358

Field-Weighted Citation Impact: 5.44