Strain-assisted <i>p</i>-type doping of II-VI semiconductors

198910 citationsJournal Article

Authors

Shang Yuan Ren · University of Science and Technology of China

Abstract

By incorporating a II-VI semiconductor into a strained-layer superlattice, it should be possible to overcome the effects of deep hole traps near the valence-band edge and hence to dope the semiconductor p type in many cases. This idea is illustrated for CdTe/ZnTe superlattices.

Topics & Keywords

Semiconductor Quantum Structures and Devices Advanced Semiconductor Detectors and Materials Quantum Dots Synthesis And Properties

UN Sustainable Development Goals

Clean water and sanitation

Publication Details

Published in: Journal of Applied Physics

Volume 66, Issue 5, pp. 2065-2068

DOI: 10.1063/1.344297

Field-Weighted Citation Impact: 1.11