Temperature Dependence of Avalanche Breakdown in InP and InAlAs

201088 citationsJournal Article

Authors

Lionel J. J. Tan · University of Sheffield

Daniel S. G. Ong · University of Sheffield

Jo Shien Ng · University of Sheffield

Chee Hing Tan · University of Sheffield

Stephen Jones · Oclaro (United Kingdom)

Yahong Qian · Oclaro (United Kingdom)

J.P.R. David ·

Abstract

Simple analytical expressions for temperature coefficients of breakdown voltage of avalanche photodiodes (APDs) utilizing InP or InAlAs are reported. The work is based on measurements of temperature dependence of avalanche breakdown voltage in a series of InP and InAlAs diodes at temperatures between 20 and 375 K. While avalanche breakdown voltage becomes more temperature sensitive with avalanche region thickness for both materials, the InAlAs diodes are less sensitive to temperature changes compared to InP diodes.

Topics & Keywords

Advanced Semiconductor Detectors and Materials Advanced Optical Sensing Technologies Semiconductor Quantum Structures and Devices

Publication Details

Published in: IEEE Journal of Quantum Electronics

Volume 46, Issue 8, pp. 1153-1157

DOI: 10.1109/jqe.2010.2044370

Field-Weighted Citation Impact: 3.23

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Temperature Dependence of Avalanche Breakdown in InP and InAlAs

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Abstract

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Publication Details