Fabrication of quantum wires in GaAs/AlGaAs heterolayers

Conducting wires of widths down to 0.1 μm have been fabricated in modulation-doped GaAs/AlGaAs material using SiCl4 reactive ion etching with a negative resist mask. The resist used was high-resolution negative (HNR) and its applicability to microstructure fabrication is discussed. A novel dry etch for GaAs, CH4/H2 reactive ion etching, produces low damage and shows much promise for wire fabrication.