Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

2010209 citationsJournal Article

Authors

J. Hader · Nonlinear Control Strategies (United States)

Jerome V. Moloney · Nonlinear Control Strategies (United States)

S. W. Koch · Philipps University of Marburg

Abstract

It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.

Topics & Keywords

Semiconductor Quantum Structures and Devices GaN-based semiconductor devices and materials solar cell performance optimization

Publication Details

Published in: Applied Physics Letters

Volume 96, Issue 22

DOI: 10.1063/1.3446889

Field-Weighted Citation Impact: 14.61

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Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

Authors

Abstract

Topics & Keywords

Publication Details