Atomic mechanism for dislocation emission from nanosized grain boundaries

The present work deals with the atomic mechanism responsible for the emission of partial dislocations from grain boundaries (GB's) in nanocrystalline metals. It is shown that in 12 and 20 nm grain size samples GB's containing GB dislocations can emit a partial dislocation during deformation by local atomic shuffling and stress-assisted free volume migration. The free volume is often emitted or absorbed in a neighboring triple junction. It is further suggested that the degree of delocalization surrounding the grain boundary dislocation determines whether atomic shuffling can associate displacements into the Burgers vector necessary to emit a partial dislocation. Temporal analysis of atomic configurations during dislocation emission indicates that creation and propagation of the partial might be separate processes.