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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
2011
2,174 citations
Journal Article
Field-Weighted Citation Impact:
122.93
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures | Researchclopedia
Samsung (South Korea)
Changjung Kim
·
Samsung (South Korea)
David H. Seo
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Samsung (South Korea)
Sunae Seo
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Sejong University
U‐In Chung
·
Samsung (South Korea)
In-Kyeong Yoo
·
Samsung (South Korea)
Kinam Kim
·
Samsung (South Korea)