Electron Quantum Interference and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mi>f</mml:mi></mml:mrow></mml:mfrac></mml:math>Noise in Bismuth

The $\frac{1}{f}$ resistance noise of thin Bi films of lateral dimensions 1-10 \ensuremath{\mu}m increases at low temperatures approximately as ${T}^{\ensuremath{-}1}$, and the noise at 1 K is larger than at room temperature. The noise magnitude is reduced by a factor of 2 above a temperature-dependent characteristic magnetic field. These phenomena demonstrate that below liquid-nitrogen temperature the $\frac{1}{f}$ noise in a weakly disordered metal arises from defect-mediated quantum interference of conduction electrons.